switche s - c hip 7 7 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com p arameter frequency min. t yp. max. units i nsertion loss dc - 1.0 ghz dc - 2.0 ghz dc - 3.0 ghz dc - 4.0 ghz 0.4 0.5 0.6 0.9 0.7 0.8 0.9 1.4 db db db db isolation dc - 4.0 ghz 24 28 db return loss on state dc - 1.0 ghz dc - 2.0 ghz dc - 3.0 ghz dc - 4.0 ghz 22 16 14 11 db db db db input p ower for 1 db c ompression 0.5 - 1.0 g hz 0.5 - 4.0 ghz 25 23 30 29 dbm dbm input t hird order i ntercept (t wo- t one input p ower= +7 dbm each t one) 0.5 - 1.0 g hz 0.5 - 4.0 ghz 43 40 48 45 dbm dbm switching c haracteristics trise , tfall (10/90% rf) ton, toff (50% ct l to 10/90% rf) dc - 4.0 ghz 3 10 ns ns HMC240A general description features functional diagram t he h m c 240a is a low cost gaas m e sf et s p d t switch chip. c overing d c to 4 g h z, this switch offers high isolation and low insertion loss. rf1 and rf2 are refective shorts when off. t he switch can oper - ate using either two negative control logic inputs of -5/0v or two positive control voltage logic inputs of 0/+5v. all data is tested with the chip in a 50 ohm test fxture connected via 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mils) length. broadband p erformance: d c - 4 g h z low i nsertion loss: 0.5 db @ 2 g h z h igh iip 3: +48 dbm small size: 0.66 x 0.60 x 0.18 mm electrical specifcations, t a = +25 c, with 0/-5v control or +5/0v control, 50 ohm system typical applications t he h m c 240a is ideal for: ? telecom infrastructure ? microwave radio & vsat ? military & space ? test instrumentation pads 3 & 7 are alternate a & b control inputs. gaas mmic spdt switch dc - 4 ghz v00.0211
switche s - c hip 7 7 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com input third order intercept point return loss 0.1 and 1 db input compression point insertion loss vs. temperature isolation -3 -2.5 -2 -1.5 -1 -0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 +25 c +85 c -55 c insertion loss (db) frequency (ghz) -50 -40 -30 -20 -10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 rf1 rf2 isolation (db) frequency (ghz) -50 -40 -30 -20 -10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 rfc rf1, rf2, on return loss (db) frequency (ghz) 30 35 40 45 50 55 60 0 0.5 1 1.5 2 2.5 3 3.5 4 +25 c +85 c -55 c ip3 (dbm) frequency (ghz) 15 20 25 30 35 0 0.5 1 1.5 2 2.5 3 3.5 4 1.0 db compression point 0.1 db compression point p1db (dbm) frequency (ghz) HMC240A v00.0211 gaas mmic spdt switch dc - 4 ghz
switche s - c hip 7 7 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com truth table: positive control voltage absolute maximum ratings c ontrol i nput c ontrol c urrent signal p ath state a (vdc) b (vdc) i a (ua) i b (ua) rf c to rf1 rf c to rf2 0 +5 -5 5 on off +5 0 5 -5 off on rf input p ower v ctrl = 0/+5 (-5)v < 0.5 ghz 0.5 - 4 ghz +27 dbm +34 dbm control voltage range (a & b= 0/+5v) -0.2 to +10 vdc control voltage range (a & b= -5/0v) -10 to +0.2 vdc storage t emperature -65 to +150 deg c operating t emperature -55 to +85 deg c e sd sensitivity (hbm) class 1a positive control voltage state bias c ondition low 0 vdc @ 5 ua h igh +3 vdc @ 3 ua to +8 vdc @ 32 ua c ontrol input voltage tolerences are 0.2 vdc. note: this part can be controlled with either positive or negative voltages per the above table. dc blocks are required at ports rfc, rf1 and rf2 if positive control voltage is used. truth table: negative control voltage c ontrol i nput c ontrol c urrent signal p ath state a (vdc) b (vdc) i a (ua) i b (ua) rf c to rf1 rf c to rf2 -5 0 -5 5 on off 0 -5 5 -5 off on negative control voltage state bias c ondition low -3 vdc @ 3 ua to -8 vdc @ 32 ua h igh 0 vdc @ 5 ua c ontrol input voltage tolerences are 0.2 vdc. e l ect ros t a tic s e ns iti v e d e v ice obs e rv e h andl i ng p r ec au ti ons HMC240A v00.0211 gaas mmic spdt switch dc - 4 ghz
switche s - c hip 7 7 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing no te s: 1. d i m e ns i ons i n i n che s [m i ll i m ete rs]. 2. d ie thic kn e ss i s 0.005. 3. t y pic al bond p ad i s 0.004 squar e . 4. t y pic al bond p ad s p a ci ng i s 0.006 ce n te r to ce n te r. 5. bond p ad m et all i za ti on: gold. 6. p ads 4 and 6 mus t b e c onn ecte d t o rf/d c ground. pad descriptions p ad number function description i nterface schematic 1, 7 a, a (alt.) see truth table and control voltage table. c onnect either pad 1 or pad 7 to control logic input. 2, 5, 8 rf1, rf c , rf2 t hese pads are d c coupled and matched to 50 ohms. blocking capacitors are required. 3, 9 b, b (alt.) see truth table and control voltage table. c onnect either pad 3 or pad 9 to control logic input. 4, 6 a c gnd must be connected to rf/d c ground. die packaging information [1] standard alternate g p -5 (gel- p ak?) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC240A v00.0211 gaas mmic spdt switch dc - 4 ghz
switche s - c hip 7 7 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com assembly diagram HMC240A v00.0211 gaas mmic spdt switch dc - 4 ghz
switche s - c hip 7 7 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based e sd protective containers, and then sealed in an e sd protective bag for shipment. once the sealed e sd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. do no t attempt to clean the chip using liquid cleaning systems. static sensitivity: follow e sd precautions to protect against e sd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. t he surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with electrically conductive epoxy. the mounting surface should be clean and fat. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. c ure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. t hermosonic wirebonding with a nominal stage temperature of 150 deg. c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. w irebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). HMC240A v00.0211 gaas mmic spdt switch dc - 4 ghz
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